Toshiba Launches Silicon Carbide MOSFET Module That Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

TOKYO–(BUSINESS WIRE)–Toshiba Electronic Devices & Storage Corporation (�Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC MOSFET chips with ratings of 3300V and 800A, for industrial applications. Volume production will start in May 2021.

To achieve a channel temperature of 175°C, the new product adopts an iXPLV (intelligent fleXible Package Low Voltage) package with silver sintering internal bonding technology and high mounting-compatibility. The new module meet the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway vehicles, and renewable energy power generation systems.

Applications

• Inverters and converters for railway vehicles
• Renewable energy power generation systems
• Industrial motor control equipment

Features

• Drain-source voltage rating : V_DSS=3300V
• Drain current rating : I_D=800A Dual
• High channel temperature range : T_ch=175°C
• Low loss :
  
  E_on=250mJ (typ.)
  
  E_off=240mJ (typ.)
  
  V_DS(on)sense=1.6V (typ.)
• Low stray inductance : L_s=12nH (typ.)
• High power density small iXPLV package

Main Specifications

(unless otherwise specified, @Tc=25°C)
Part number			MG800FXF2YMS3
Package			iXPLV
Absolute maximum ratings	Drain-source voltage VDSS (V)		3300
	Gate-source voltage VGSS (V)		+25/-10
	Drain current (DC) ID (A)		800
	Drain current (pulsed) IDP (A)		1600
	Channel temperature Tch (°C)		175
	Isolation voltage Visol (Vrms)		6000
Electrical characteristics	Drain-source voltage on-voltage (sense) VDS(on)sense typ. (V)	@VGS= +20V, ID=800A	1.6
	Source-drain voltage on-voltage (sense) VSD(on)sense typ. (V)	@VGS= +20V, IS=800A	1.5
	Source-drain voltage off-voltage (sense) VSD(off)sense typ. (V)	@VGS= ?6V, IS=800A	2.3
	Stray inductance module LSPN typ. (nH)		12
	Turn-on switching loss Eon typ. (mJ)	@VDD=1800V, ID=800A, Tch=150°C	250
	Turn-off switching loss Eoff typ. (mJ)	@VDD=1800V, ID=800A, Tch=150°C	240

Follow the link below for more on the new product.

MG800FXF2YMS3

https://toshiba.semicon-storage.com/info/lookup.jsp?pid=MG800FXF2YMS3

Follow the link below for more on Toshiba’s SiC power device lineup.

SiC Power Devices

https://toshiba.semicon-storage.com/ap-en/semiconductor/product/sic-power-devices.html

Customer Inquiries

Small Signal Device Sales & Marketing Dept.

Tel: +81-3-3457-3411

https://toshiba.semicon-storage.com/ap-en/contact.html

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*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

About Toshiba Electronic Devices & Storage Corporation

Toshiba Electronic Devices & Storage Corporation combines the vigor of a new company with the wisdom of experience. Since becoming an independent company in July 2017, the company has taken its place among the leading general devices companies, and offers its customers and business partners outstanding solutions in discrete semiconductors, system LSIs and HDD.

Its 24,000 employees around the world share a determination to maximize the value of its products, and emphasize close collaboration with customers to promote co-creation of value and new markets. The company looks forward to building on annual sales now surpassing 750-billion yen (US$6.8 billion) and to contributing to a better future for people everywhere.

Find out more about Toshiba Electronic Devices & Storage Corporation at https://toshiba.semicon-storage.com/ap-en/top.html

Contacts

Media Inquiries:
Chiaki Nagasawa

Digital Marketing Department

Toshiba Electronic Devices & Storage Corporation

Tel: +81-3-3457-4963

semicon-NR-mailbox@ml.toshiba.co.jp