Will contribute to more efficient, smaller and lighter power-electronics equipment
TOKYO–(BUSINESS WIRE)–Mitsubishi Electric Corporation (TOKYO:6503) announced today its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip for industrial use. The low power loss characteristics and high carrier frequency operation1 of the SiC-MOSFET (metal oxide semiconductor field-effect transistor) and SiC-SBD (schottky barrier diode) chips in the modules are expected to facilitate the development of more efficient, smaller and lighter weight power equipment in various industrial fields. Sales will start in January, 2021.
1 Frequency that determines the ON/OFF timing of the switching element in an inverter circuit
Product Features
1) Will facilitate more power-efficient, smaller and lighter industrial equipment
For the full text, please visit: www.MitsubishiElectric.com/news/
Contacts
Customer Inquiries
Power Device Overseas Marketing Dept.A and Dept.B
Mitsubishi Electric Corporation
www.MitsubishiElectric.com/semiconductors/
Media Inquiries
Takeyoshi Komatsu
Public Relations Division
Mitsubishi Electric Corporation
Tel: +81-3-3218-2346
prd.gnews@nk.MitsubishiElectric.co.jp
www.MitsubishiElectric.com/news/
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